october 2008 fgb3236_f085 / fgi3236_f085 320m j, 360v, n-channel ignition igbt @2008 fairchild semiconductor corporation fgb3236_f085 / fgi3236_f085 rev. a www.fairchildsemi.com 1 fgb3236_f085 / fgi3236_f085 ecospark tm 320mj, 360v, n-ch annel ignition igbt features ? industry standard d 2 -pak package ? scis energy = 320mj at t j = 25 o c ? logic level gate drive ? qualified to aec q101 ? rohs compliant applications ? automotive lgnition coil driver circuits ? coil on plug applications package collector to262ab (flange) fdi series g e jedec to-263ab d 2 -pak gate emitter collector
fgb3236_f085 / fgi3236_f085 320m j, 360v, n-channel ignition igbt fgb3236_f085 / fgi3236_f085 rev. a www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t a = 25c unless otherwise noted off state characteristics on state characteristics symbol parameter ratings units bv cer collector to emitter breakdown voltage (i c = 1ma) 360 v bv ecs emitter to collector voltage - reverse battery condition (i c = 10ma) 24 v e scis25 self clamping inductive switching energy (i scis = 14.7a, l = 3.0mhy, t j = 2 5 c ) 3 2 0 m j e scis150 self clamping inductive switching energy (i scis = 10.4a, l = 3.0mhy, t j = 150c) 160 mj i c25 collector current continuous, at v ge = 4.0v, t c = 25c 44 a i c110 collector current continuous, at v ge = 4.0v, t c = 110c 27 a v gem gate to emitter voltage continuous 10 v p d power dissipation total, at t c = 25c 187 w power dissipation derating, for t c > 25 o c1.25w/ o c t j operating junction temperature range -40 to +175 o c t stg storage junction temperature range -40 to +175 o c t l max. lead temp. for soldering (leads at 1.6mm from case for 10s) 300 o c t pkg max. lead temp. for soldering (package body for 10s) 260 o c esd electrostatic discharge voltage at100pf, 1500 ? 4kv device marking device package reel size tape width quantity fgb3236 fgb3236_f085 to263 330mm 24mm 800 units fgi3236 fgi3236_f085 to262 tube na 50 units symbol parameter test conditions min typ max units bv cer collector to emitter breakdown voltage i ce = 2ma, v ge = 0, r ge = 1k ? , see fig. 15 t j = -40 to 150 o c 330 363 390 v bv ces collector to emitter breakdown voltage i ce = 10ma, v ge = 0v, r ge = 0, t j = -40 to 150 o c 350 378 410 v bv ecs emitter to collector breakdown voltage i ce = -75ma, v ge = 0v, t c = 25c 30 - - v bv ges gate to emitter breakdown voltage i ges = 2ma 12 14 - v i ces collector to emitter leakage current v ces = 250v, see fig. 11 t c = 25 o c--25 a t c = 150 o c--1ma i ecs emitter to collector leakage current v ec = 24v, s e e f i g . 1 1 t c = 25 o c --1 ma t c = 150 o c--40 r 1 series gate resistance - 100 - ? r 2 gate to emitter resistance 10k - 30k ? v ce(sat) collector to emitter saturation voltage i ce = 6a, v ge = 4v, t c = 25 o c , see fig. 3 -1.141.4 v v ce(sat) collector to emitter saturation voltage i ce = 10a, v ge = 4.5v, t c = 150 o c, see fig. 4 -1.321.7 v v ce(sat) collector to emitter saturation voltage i ce = 15a, v ge = 4 . 5 v, t c = 150 o c - 1.61 2.05 v i ce(on) collector to emitter on state current v ge = 5v, v ce = 5v 50 - - a device maximum ratings t a = 25c unless otherwise noted
fgb3236_f085 / fgi3236_f085 320m j, 360v, n-channel ignition igbt fgb3236_f085 / fgi3236_f085 rev. a www.fairchildsemi.com 3 electrical characteristics t a = 25c unless otherwise noted dynamic characteristics switching characteristics thermal characteristics symbol parameter test conditions min typ max units q g(on) gate charge i ce = 10a, v ce = 12v, v ge = 5v, see fig.14 -20-nc v ge(th) gate to emitter threshold voltage i ce = 1ma, v ce = v ge, see fig. 10 t c = 25 o c 1.3 1.6 2.2 v t c = 150 o c 0.75 1.1 1.8 v gep gate to emitter plateau voltage v ce = 12v, i ce = 1 0 a - 2 . 6 - v t d(on)r current turn-on delay time-resistive v ce = 14v, r l = 1 ? v ge = 5v, r g = 1k ? t j = 25 o c, see fig.12 -0.654 s t rr current rise time-resistive - 1.7 7 s t d(off)l current turn-off delay time-inductive v ce = 300v, l = 500 hy, v ge = 5v, r g = 1k ? t j = 25 o c, see fig.12 - 5 . 4 1 5 s t fl current fall time-inductive - 1.64 15 s scis self clamped inductive switching t j = 25 o c, l = 3.0mhy, i ce = 14.7a, r g = 1k ?, v ge = 5v, see fig.1&2 - - 320 mj r jc thermal resistance junction to case all packages - - 0.8 o c/w
fgb3236_f085 / fgi3236_f085 320m j, 360v, n-channel ignition igbt fgb3236_f085 / fgi3236_f085 rev. a www.fairchildsemi.com 4 typical performance curves figure 1. self clamped inductive switching current vs. time in clamp 0 20 40 60 80 100 120 140 160 0 5 10 15 20 25 30 35 scis curves valid for v clamp voltages of <410v t j = 150 o c t j = 25 o c t clp , time in clamp ( s ) i scis , inductive switching current (a) r g = 1k ? , v ge = 5v figure 2. 0246810 0 5 10 15 20 25 30 35 scis curves valid for v clamp voltages of <410v t j = 150 o c t j = 25 o c l, inductance ( mhy ) i scis , inductive switching current (a) r g = 1k ? , v ge = 5v self clamped inductive switching current vs. inductance figure 3. -75 -50 -25 0 25 50 75 100 125 150 175 1.00 1.05 1.10 1.15 1.20 1.25 i ce = 6a v ge = 8v v ge = 5v v ge = 4.5v v ge = 4.0v v ge = 3.7v v ce , collector to emitter voltage (v) t j , junction temperture ( o c ) collector to emitte r on-state voltage vs. junction temperature figure 4. -75 -50 -25 0 25 50 75 100 125 150 175 1.20 1.25 1.30 1.35 1.40 1.45 i ce = 10a v ge = 8v v ge = 5v v ge = 4.5v v ge = 4.0v v ge = 3.7v v ce , collector to emitter voltage (v) t j , junction temperture ( o c ) collector to emitte r on-state voltage vs. junction temperature figure 5. 01234 0 10 20 30 40 50 t j = -40 o c v ge = 4.5v v ge = 5.0v v ge = 3.7v v ge = 4.0v v ge = 8.0v v ce , collector to emitter voltage (v) i ce , collector to emitter current (a) collector to emitte r on-state voltage vs. collector current figure 6. collector to emitter on-state voltage vs. collector current 01234 0 10 20 30 40 50 t j = 25 o c v ge = 4.5v v ge = 5.0v v ge = 3.7v v ge = 4.0v v ge = 8.0v v ce , collector to emitter voltage (v) i ce , collector to emitter current (a)
fgb3236_f085 / fgi3236_f085 320m j, 360v, n-channel ignition igbt fgb3236_f085 / fgi3236_f085 rev. a www.fairchildsemi.com 5 figure 7. 01234 0 10 20 30 40 50 t j = 175 o c v ge = 4.5v v ge = 5.0v v ge = 3.7v v ge = 4.0v v ge = 8.0v v ce , collector to emitter voltage (v) i ce , collector to emitter current (a) collector to emitte r on-state voltage vs. collector current figure 8. 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 10 20 30 40 50 t j = -40 o c t j = 25 o c t j = 175 o c pulse duration = 80 s duty cycle = 0.5% max v ce = 5v i ce , collector to emitter current (a) v ge , gate to emitter voltage (v) transfer characteristics figure 9. 25 50 75 100 125 150 175 0 10 20 30 40 50 i ce , dc collector current (a) t c , case temperature ( o c ) v ge = 4.0v dc collector current vs. case temperature figure 10. threshold voltage vs. junction temperature -50 -25 0 25 50 75 100 125 150 175 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v ce = v ge i ce = 1m a v th , threshold voltage (v) t j , junction temperature ( o c ) figure 11. -50 -25 0 25 50 75 100 125 150 175 0.1 1 10 100 1000 10000 50000 v ces = 250v v ces = 300v v ecs = 24v t j , junction temperature ( o c ) leakage current ( a ) leakage current vs. junction temperature figure 12. 25 50 75 100 125 150 175 0 2 4 6 8 10 12 14 resistive t on inductive t off resistive t off switching time ( s ) t j , junction temperature ( o c ) i ce = 6.5a, v ge = 5v, r g = 1k ? switching time vs. junction temperature typical performance curves (continued)
fgb3236_f085 / fgi3236_f085 320m j, 360v, n-channel ignition igbt fgb3236_f085 / fgi3236_f085 rev. a www.fairchildsemi.com 6 figure 13. 0 5 10 15 20 25 0 400 800 1200 1600 2000 f = 1mhz v ge = 0v c res c oes c ies v ds , drain to source voltage ( v ) capacitance (pf) capacitance vs. coll ector to emitter voltage figure 14. 0 1020304050 0 2 4 6 8 10 i ce = 10a, t j = 25 o c v ce = 6v v gs , gate to emitter voltage(v) q g , gate charge(nc) v ce = 12v gate charge figure 15. 10 100 1000 350 360 370 380 t j = 25 o c t j = -40 o c t j = 175 o c i cer = 10ma r g , series gate resistance ( ? ) bv cer , breakdown voltage (v) 6000 break down voltage vs. series gate resistance figure 16. 10 -5 10 -4 10 -3 10 -2 10 -1 1 1e-3 0.01 0.1 1 single pulse d = 0.50 0.20 0.10 0.05 0.02 0.01 normalized thermal impedance, z jc t, rectangular pulse duration(s) duty cycle - descending order 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z jc x r jc + t c p dm t 1 t 2 igbt normalized transient thermal impedance, junction to case typical performance curves (continued)
test circuit and waveforms fgb3236_f085 / fgi3236_f085 320m j, 360v, n-channel ignition igbt fgb3236_f085 / fgi3236_f085 rev. a www.fairchildsemi.com 7
fgb3236_f085 / fgi3236_f085 320m j, 360v, n-channel ignition igbt fgb3236_f085 / fgi3236_f085 rev. a www.fairchildsemi.com 8
october 2008 fgb3236_f085 / fgi3236_f085 320m j, 360v, n-channel ignition igbt @2008 fairchild semiconductor corporation fgb3236_f085 / fgi3236_f085 rev. a www.fairchildsemi.com 9
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